Major progress in South Korean p-type perovskite transistors, promising for AI computing DRAM

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A South Korean research team has achieved a breakthrough in the semiconductor field by successfully developing p-type perovskite transistors with greatly enhanced performance and stability. This advancement is expected to solve the core challenge that has long restricted the development of high-performance, low-power chips and to open new pathways for next-generation memory devices such as vertically stacked DRAM for AI computing.

According to a report by The Korea Herald on Thursday, the research team led by Professor Noh Yong-young at Pohang University of Science and Technology (POSTECH) announced that their p-type perovskite transistor based on cesium-tin-iodide (CsSnI₃) thin film has achieved a hole mobility exceeding 50 cm²/V·s and a current on/off ratio surpassing 100 million (10⁸), marking the highest global level for p-type perovskite transistors. The related research has been published in the top international academic journal, Nature.

The core breakthrough of this study lies in addressing the long-standing air stability problem of tin-based perovskite semiconductors—the new device can operate stably for more than four hours in the air and retain its initial performance for over a month under accelerated aging at 100°C, whereas previous similar devices would fail within minutes in the air.

The research team stated that this achievement will accelerate the practical application of p-type perovskite thin-film transistors in integrated circuits, and is of great significance for fields such as vertically stacked DRAM for AI computing, next-generation display driving circuits, and wearable devices.

P-type Transistors: One of the "Top Ten Future Challenges" in the Semiconductor Field

Transistors are the fundamental building blocks of chips, divided into n-type, which transport electrons, and p-type, which transport holes (spaces left when electrons depart). Achieving high-performance, low-power semiconductors relies on balanced performance of both types of transistors. However, improving p-type transistor performance has always been extremely difficult, and has been listed by South Korea’s Ministry of Science and ICT as one of the "Top Ten Future Challenges" in the semiconductor field.

Tin-based perovskite materials have long been regarded as a promising solution due to their smooth hole transport and performance comparable to existing oxide semiconductors. However, their biggest flaw is extreme sensitivity to air: unreacted tin ions (Sn²⁺) left on the material surface oxidize rapidly upon contact with air, creating numerous defects that impede charge flow and cause a sharp decline in semiconductor performance.

"Volatile Surface Reconstruction" Strategy Solves Stability Bottleneck

The Noh Yong-young team proposed a solution called "volatile surface reconstruction."

After applying potassium acetate (KAc) treatment to the CsSnI₃ semiconductor surface, the previously performance-deteriorating unreacted tin ions convert into volatile tin acetate (Sn(Ac)₂), which naturally evaporates into the air. Once the tin ions depart, potassium iodide (KI) forms in situ, creating a "self-defense layer" that protects the semiconductor from environmental intrusion.

This process significantly lowers the device’s threshold voltage, raises hole mobility beyond 50 cm²/V·s, and achieves a current on/off ratio above 10⁸. In terms of stability, the new device can continuously operate for more than 4 hours in the air and maintain its initial performance for over a month under accelerated aging at 100°C, representing a qualitative leap in stability compared to previous similar devices.

Application Prospects: AI Memory, Display Drivers, and Wearables

Professor Noh Yong-young stated that this is the world’s first publication in Nature featuring p-type perovskite thin-film transistors, made possible by six years of continuous support from Samsung Display and the Ministry of Science and ICT.

He pointed out that this research has solved the long-standing low stability problem of tin-based perovskite semiconductors, which will help establish the long-term stability of p-type perovskite thin-film transistors and promote their application in integrated circuits. In terms of applications, this technology is expected to become a key foundation for core future electronic industry technologies, including AI computing-oriented vertically stacked DRAM, next-generation display driving circuits, wearable devices, and highly integrated semiconductor devices.

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