Samsung Electronics begins delivering the industry's first HBM4E samples, with performance over 20% higher than the previous generation.

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Samsung Electronics is accelerating its deployment of next-generation high-bandwidth memory. Just months after mass production of HBM4, the company has begun delivering HBM4E samples to major clients, becoming the industry's first manufacturer to ship this product.

On May 29, Samsung Electronics announced that it has started shipping 12-layer HBM4E samples to major global clients. The product's pin transfer speed is stable at 14Gbps, with performance scalable up to 16Gbps, over 20% higher than HBM4. Each stack's memory bandwidth reaches 3.6TB/s, with a capacity of 48GB—over 30% higher than the previous generation. Samsung stated that HBM4E mass production will proceed according to customer timelines.

The simultaneous rise in general DRAM prices has markedly increased the bargaining power of HBM manufacturers. Both Samsung and SK Hynix need not rely on HBM shipment volume, enabling them to maintain a strong position during price negotiations. Previous negotiations for Samsung HBM4 had prices around $700, which is 20% to 30% higher than the previous HBM3E generation.

HBM4E Technical Specifications: Dual Upgrades in Speed and Capacity

The HBM4E shipped by Samsung this time adopts a 12-layer stack structure with a capacity of 48GB. Samsung also plans to launch 32GB (8-layer) and 64GB (16-layer) versions subsequently to meet different client needs.

In terms of performance parameters, HBM4E's memory bandwidth reaches 3.6TB/s, mainly targeting intense data processing scenarios in large language model (LLM) training and next-generation AI systems. According to Samsung, compared with the previous generation, HBM4E's energy efficiency has increased by 16%, thermal resistance characteristics have improved by over 14%, helping extend reliability and reduce energy consumption in high-load data center environments.

On the process side, HBM4E continues to use Samsung’s sixth-generation 10nm-class DRAM process (1c) and Samsung’s foundry 4nm logic base chip. It shares the same core technology pathway as HBM4, aiming to enhance process stability and yield. Sang Joon Hwang, Executive Vice President of Samsung's memory development division, stated that HBM4E again demonstrates Samsung's technological differentiation advantage, and the company will continue to drive growth in the global AI storage market.

Storage Prices Rising Across the Board, Korean Firms’ Profits Expected to Reach Record Highs

With the sharp rise in general DRAM prices, the profitability has almost caught up to HBM, granting Samsung and SK Hynix greater initiative in setting HBM prices. To maximize profits, Samsung has not excessively shifted DRAM production capacity to HBM but rather allocates capacity prudently—this strategy further supports the high price range of HBM.

The simultaneous price increase in HBM, general DRAM, and NAND flash has brought comprehensive profit improvement expectations for Korean memory manufacturers. Morgan Stanley predicts that Samsung Electronics' operating profit will reach approximately 245.7 trillion KRW this year, a year-on-year increase of 464%; SK Hynix's operating profit is expected to reach about 179.4 trillion KRW, a year-on-year increase of about 280%. The performance improvements of both companies are expected to run throughout the year.

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