Samsung will be the first to mass produce HBM4: Securing the "next ticket" for AI storage.

Samsung Electronics will be the first in the world to launch large-scale mass production and shipment of HBM4 after the Lunar New Year holiday, with this new generation of high-bandwidth memory for AI chips boasting industry-leading performance. This move marks Samsung's attempt to establish dominance in the next-generation AI memory market and recover market share lost with previous-generation products.

According to industry sources, Samsung Electronics has scheduled the mass production and shipment of HBM4 for NVIDIA in the third week of this month, immediately following the Lunar New Year holiday. This marks the first worldwide mass production and shipment of the new generation HBM4.

Samsung Electronics is said to have already passed NVIDIA's quality tests in advance and secured procurement orders, with the production schedule finalized after considering the launch plan of NVIDIA’s Vera Rubin AI accelerator. NVIDIA plans to showcase products featuring Samsung HBM4 and Vera Rubin at the NVIDIA GTC 2026 conference next month.

This development will directly impact the AI chip supply chain and is set to reshape the competitive landscape of the high-end memory market.

Performance Metrics Lead Industry Standards

Samsung Electronics' HBM4 achieves significant performance leaps beyond industry standards. From the start of R&D, Samsung aimed to surpass JEDEC (Solid State Technology Association) performance standards, utilizing 1c DRAM technology and 4nm wafer foundry processes.

Thanks to this combination, Samsung HBM4 delivers data processing speeds of 11.7 Gbps, exceeding the JEDEC standard of 8 Gbps by about 37%, and is 22% faster than the previous-generation HBM3E at 9.6 Gbps. Single-stack memory bandwidth reaches 3 TB/s, 2.4 times that of its predecessor. The use of 12-layer stacking technology provides 36 GB capacity, and future 16-layer stacks can expand capacity to 48 GB.

This product adopts a low-power design while boosting computing performance, potentially helping data centers reduce electricity consumption and cooling costs.

Capacity Expansion to Meet Soaring Demand

Market conditions are favorable for Samsung. Samsung Electronics expects HBM sales this year to more than double last year’s, and has decided to install new production lines at the fourth plant in Pyeongtaek to expand capacity.

Leveraging its unique position as the world’s only company with logic chips, memory, wafer foundry, and packaging capabilities, Samsung plans to maximize its competitive edge as a comprehensive one-stop solution provider through the synergy of advanced memory and wafer foundry technologies.

According to industry sources, "Samsung Electronics has the largest production capacity and the broadest product line globally, and by taking the lead in mass-producing the highest-performance HBM4, it has demonstrated its technological competitiveness." The source added, "The company is now in the most advantageous position to lead the market."

Imminent Market Reshaping

This production schedule places Samsung ahead of competitors like SK Hynix. As a key component for next-generation AI accelerators, the supply capability of HBM4 will directly impact the product launch pace and performance of chip makers such as NVIDIA.

Samsung’s latest procurement orders reportedly include a significant increase in HBM4 samples for client finished module testing, indicating its strengthened position in major customer supply chains. This provides a reference for investors assessing Samsung’s competitiveness in the high-end memory market.

Risk Warning and DisclaimerThe market is risky and investment should be cautious. This article does not constitute personal investment advice, nor does it take into account the specific investment objectives, financial situation or needs of any individual user. Users should consider whether any opinions, views, or conclusions in this article are suitable for their particular situation. Investments made accordingly are at your own risk.