SK Hynix launches recruitment, jointly develops 3D stacked DRAM with US clients

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SK Hynix is accelerating the deployment of next-generation memory technology, extending the battlefield from high-bandwidth memory (HBM) to the field of 3D-stacked DRAM for edge AI.

SK Hynix has recently launched recruitment for 3D-stacked DRAM-on-Logic design engineers through its North American subsidiary in San Jose, USA. This move marks the company's first dedicated talent reserve in this technical direction, and it has already established collaborations with specific American customers to jointly advance the commercialization of related technologies.

In the recruitment announcement, SK Hynix explicitly stated that the goal is "to work closely with American customers, lead the joint design of 3D-stacked DRAM logic chips, and provide chip design solutions that meet technical requirements and market changes."

This deployment carries important signals for investors. 3D-stacked DRAM is regarded as the core memory technology of the edge AI era, with target markets including high value-added areas such as smartphone application processors. Potential customers include leading chip design firms such as Apple and Qualcomm.

Technical Route: Memory Directly Stacked on Logic Chip

3D-stacked DRAM-on-Logic is an advanced packaging technology that vertically stacks DRAM on top of system semiconductors (logic chips). Compared to traditional PoP (Package-on-Package) structures, it greatly shortens inter-chip interconnect distances, enables more data transmission channels (I/O) within the same area, thereby reducing data transmission latency, and improving power efficiency and space utilization.

SK Hynix stated that edge AI's simultaneous demand for high memory bandwidth and low power consumption creates obvious bottlenecks in the performance of traditional PoP structures, and 3D-stacked DRAM-on-Logic is designed to break through this limitation. The most prominent application scenario currently is mobile application processors, which undertake the core computing functions of smartphones and have the most urgent need for advanced packaging technology.

The head of SK Hynix's development division said at the "TSMC Technology Symposium 2026" in April this year, "The integration of memory and logic technology is the breakthrough to overcome existing architecture limitations and maximize AI performance." He also made it clear that 3D-stacked DRAM-on-Logic is included in the company's roadmap for customer-centric multi-workload solutions, listed along with customized HBM and high-bandwidth flash (HBF) as three major directions.

Competitive Background: HBM Landscape Firmed, Edge AI Becomes the Next Battlefield

After securing a leading position in the HBM field, SK Hynix is now shifting resources towards the edge AI memory track. 3D-stacked DRAM is viewed by the industry as a key semiconductor for edge AI devices in the era of physical AI, with the competitive landscape not yet formed, and the strategic value of early deployment is significant.

SK Hynix is also advancing on multiple technology lines simultaneously: it is reported that its Yeoju plant "Y1" started equipment procurement in July, the Cheongju plant’s NAND production line plans to invest around 100 trillion Korean won for expansion, and HBM4E 12-layer samples have been supplied to major customers. The launch of 3D-stacked DRAM recruitment further enriches the company’s product matrix for the AI era.

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